Photoluminescent properties of undoped GaN prepared by atmospheric vapor phase epitaxy

被引：3
|
作者：
Yi, GC
Wessels, BW
机构：
来源：
ICDS-18 - PROCEEDINGS OF THE 18TH INTERNATIONAL CONFERENCE ON DEFECTS IN SEMICONDUCTORS, PTS 1-4 | 1995年 / 196-卷
关键词：
GaN; photoluminescence; atmospheric metal-organic vapor phase epitaxy;
D O I：
10.4028/www.scientific.net/MSF.196-201.49
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
The photoluminescent properties of GaN prepared by metal-organic vapor phase epitaxy were studied. Strong near band edge luminescence was observed. High resolution photoluminescence spectroscopy indicated three transitions at 3.472, 3.482 and 3.49 eV. The two higher energy transitions are ascribed to free excitons and the lower energy transition to a bound exciton. The photoluminescent properties of samples grown under different conditions were analyzed.
引用
收藏
页码：49 / 53
页数：5
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