共 50 条
- [12] PATTERN PROFILE CONTROL OF POLYSILICON PLASMA-ETCHING [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1985, 3 (01): : 16 - 19
- [16] PLASMA-ETCHING OF SI AND SIO2 IN SF6-O2 MIXTURES [J]. JOURNAL OF APPLIED PHYSICS, 1981, 52 (01) : 162 - 167
- [17] Profile control of SiO2 trench etching for damascene interconnection process [J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 2001, 40 (4A): : 2501 - 2505
- [18] Profile control of SiO2 trench etching for damascene interconnection process [J]. Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, 2001, 40 (4 A): : 2501 - 2505
- [20] CONTROL OF RELATIVE ETCH RATES OF SIO2 AND SI IN PLASMA ETCHING [J]. SOLID-STATE ELECTRONICS, 1975, 18 (12) : 1146 - 1147