WETTABILITY OF SILICON-CARBIDE BY GOLD, GERMANIUM AND SILICON

被引：32

作者：

LI, JG

HAUSNER, H

机构：

[1] Institut für Nichtmetallische Werkstoffe, Technische Universität Berlin, Berlin 12, 1000

来源：

JOURNAL OF MATERIALS SCIENCE LETTERS | 1991年 / 10卷 / 21期

关键词：

D O I：

10.1007/BF00720944

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

[No abstract available]

引用

页码：1275 / 1276

页数：2

共 50 条

[31] DINISTOR ON SILICON-CARBIDE
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[32] OXIDATION OF SILICON-CARBIDE
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[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1976, 123 (08) : C253 - C253
[33] UTILIZATION OF SILICON-CARBIDE
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[J]. KEMIAI KOZLEMENYEK, 1975, 44 (1-2): : 165 - 187
[34] JOINING OF SILICON-CARBIDE SILICON-CARBIDE COMPOSITES AND DENSE SILICON-CARBIDE USING COMBUSTION REACTIONS IN THE TITANIUM-CARBON-NICKEL SYSTEM
RABIN, BH
[J]. JOURNAL OF THE AMERICAN CERAMIC SOCIETY, 1992, 75 (01) : 131 - 135
[35] THERMAL-EXPANSION OF SILICON-CARBIDE MONOFILAMENTS AND SILICON-CARBIDE BOROSILICATE COMPOSITES
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[J]. JOURNAL OF THE AMERICAN CERAMIC SOCIETY, 1992, 75 (10) : 2871 - 2873
[36] REACTION BONDED SILICON-CARBIDE AND SILICON-CARBIDE AND SILICON-NITRIDE FOR GAS-TURBINE APPLICATIONS
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[J]. MECHANICAL ENGINEERING, 1972, 94 (05): : 66 - &
[37] HIPING OF SILICON-CARBIDE AND SILICON-NITRIDE
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[J]. FABRICATION TECHNOLOGY, 1989, 45 : 33 - 44
[38] OXIDATION OF SILICON-NITRIDE AND SILICON-CARBIDE
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[J]. AMERICAN CERAMIC SOCIETY BULLETIN, 1981, 60 (03): : 379 - 379
[39] SILICON PROCESSING WITH SILICON-CARBIDE FURNACE COMPONENTS
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[J]. SOLID STATE TECHNOLOGY, 1984, 27 (10) : 143 - 146
[40] ELECTROPHYSICAL CHARACTERISTICS OF SILICON-CARBIDE FILMS ON SILICON
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SIDYAKIN, VG
[J]. INORGANIC MATERIALS, 1989, 25 (09) : 1326 - 1328

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