共 50 条
- [2] PREPARATION OF SIO2 BY THE THERMAL-OXIDATION OF OCTAVINYLSILSESQUIOXANE [J]. JOURNAL OF APPLIED CHEMISTRY OF THE USSR, 1982, 55 (10): : 1982 - 1986
- [3] KINETICS OF RAPID THERMAL-OXIDATION [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1989, 136 (09) : 2673 - 2676
- [5] SIO2 FILM STRESS-DISTRIBUTION DURING THERMAL-OXIDATION OF SI [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1988, 6 (02): : 574 - 578
- [6] Growth of thin SiO2 by "spike" rapid thermal oxidation [J]. ULTRATHIN SIO2 AND HIGH-K MATERIALS FOR ULSI GATE DIELECTRICS, 1999, 567 : 13 - 19
- [7] KINETICS OF RAPID THERMAL-OXIDATION OF SILICON [J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 1992, 31 (10): : 3436 - 3439
- [9] STRESS GRADIENTS IN SIO2 THIN-FILMS PREPARED BY THERMAL-OXIDATION AND SUBJECTED TO RAPID THERMAL ANNEALING [J]. RAPID THERMAL ANNEALING / CHEMICAL VAPOR DEPOSITION AND INTEGRATED PROCESSING, 1989, 146 : 197 - 202
- [10] KINETICS OF RAPID THERMAL-OXIDATION OF (100) SI [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1987, 134 (03) : C118 - C118