A NEW SCALING LENGTH FOR SEMICONDUCTOR-DEVICE MODELING

被引：0

作者：

DE, SS

GHOSH, AK

机构：

来源：

CANADIAN JOURNAL OF PHYSICS | 1991年 / 69卷 / 02期

关键词：

D O I：

10.1139/p91-021

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

Through the use of an approximate solution of Poisson's equation, a new scaling length has been introduced that is appropriate to semiconductor-device modeling of surface problems or step-junction problems in regions where the fixed charges are dominant.

引用

页码：142 / 145

页数：4

共 50 条

[1] NEW TECHNIQUE FOR SEMICONDUCTOR-DEVICE MODELING
GOSWAMI, PK
SITCH, JE
[J]. ELECTRONICS LETTERS, 1983, 19 (25-2) : 1087 - 1088
[2] SEMICONDUCTOR-DEVICE MODELING
SNOWDEN, CM
[J]. REPORTS ON PROGRESS IN PHYSICS, 1985, 48 (02) : 223 - 275
[3] A NEW ACCURATE METHOD FOR SEMICONDUCTOR-DEVICE MODELING
AXELRAD, V
[J]. 1989 INTERNATIONAL SYMPOSIUM ON VLSI TECHNOLOGY, SYSTEMS AND APPLICATIONS: PROCEEDINGS OF TECHNICAL PAPERS, 1989, : 116 - 120
[4] BIBLIOGRAPHY ON SEMICONDUCTOR-DEVICE MODELING
AGAJANIAN, AH
[J]. SOLID-STATE ELECTRONICS, 1975, 18 (11) : 917 - 929
[5] AN INEXPENSIVE SEMICONDUCTOR-DEVICE CHARACTERIZATION AND MODELING EXPERIMENT
WEBB, PW
[J]. INTERNATIONAL JOURNAL OF ELECTRICAL ENGINEERING EDUCATION, 1990, 27 (04) : 300 - 307
[6] AN APPROXIMATE SOLUTION OF POISSON EQUATION FOR SEMICONDUCTOR-DEVICE MODELING
DE, SS
GHOSH, AK
[J]. SOLID-STATE ELECTRONICS, 1989, 32 (07) : 517 - 519
[7] SEMICONDUCTOR-DEVICE OBSOLESCENCE
WILLIAMS, T
[J]. ELECTRONIC ENGINEERING, 1986, 58 (710): : 31 - 31
[8] SOFTWARE PERMITS EASY SEMICONDUCTOR-DEVICE THERMAL MODELING
RAVINE, TL
[J]. MICROWAVES & RF, 1993, 32 (02) : 63 - &
[9] NEW SEMICONDUCTOR-DEVICE WITH NEGATIVE DIFFERENTIAL CONDUCTANCE
BANTSER, SG
GULE, EA
KLIMOVSKAYA, AI
[J]. INSTRUMENTS AND EXPERIMENTAL TECHNIQUES, 1987, 30 (01) : 114 - 116
[10] SEMICONDUCTOR-DEVICE SIMULATION
FICHTNER, W
ROSE, DJ
BANK, RE
[J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1983, 30 (09) : 1018 - 1030

← 1 2 3 4 5 →