2-STEP PHOTOCONDUCTIVITY BY DISLOCATIONS IN SILICON

被引：12
|
作者：
KOS, HJ [1 ]
NEUBERT, D [1 ]
机构：
[1] INST BERLIN,PHYS TECH BUNDESANSTALT,BERLIN,FED REP GER
来源：
PHYSICA STATUS SOLIDI A-APPLIED RESEARCH | 1977年 / 44卷 / 01期
关键词：
D O I：
10.1002/pssa.2210440127
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
引用
收藏
页码：259 / 264
页数：6
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