2-STEP PHOTOCONDUCTIVITY BY DISLOCATIONS IN SILICON

被引：12

|

作者：

KOS, HJ ^{[1
]}

NEUBERT, D ^{[1
]}

机构：

[1] INST BERLIN,PHYS TECH BUNDESANSTALT,BERLIN,FED REP GER

来源：

PHYSICA STATUS SOLIDI A-APPLIED RESEARCH | 1977年 / 44卷 / 01期

关键词：

D O I：

10.1002/pssa.2210440127

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

收藏

页码：259 / 264

页数：6

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