SURFACE SENSITIVITY OF ION-INDUCED AUGER-ELECTRON EMISSION (IAE) SPECTROSCOPY

被引：3
|
作者：
VERUCCHI, R [1 ]
ALTIERI, S [1 ]
VALERI, S [1 ]
机构：
[1] UNIV MODENA, INFM, I-41100 MODENA, ITALY
来源：
SURFACE SCIENCE | 1995年 / 331卷
关键词：
AMORPHOUS SURFACES; AUGER EJECTION; AUGER ELECTRON SPECTROSCOPY; GERMANIUM; ION BOMBARDMENT; SILICON; SPUTTER DEPOSITION;
D O I：
10.1016/0039-6028(95)00303-7
中图分类号：
O64 [物理化学（理论化学）、化学物理学];
学科分类号：
070304 ; 081704 ;
摘要：
We investigated the electron emission induced by energetic sputter-deposited Si particles during ion beam sputter deposition of Si on Ge substrate. Electron emission is strictly similar to the ion-induced Auger (IAE) Si spectra and originates in Si-Si collisions. Monitoring this ''IAE-like'' Si yield during the Si layer-by-layer growth, we measured the surface sensitivity of particle-induced electron emission for different energies of the involved particles and for different experimental geometries. We found that the depth sampled by IAE spectroscopy critically depends on the experimental parameters. The surface sensitivity of IAE is, in several cases, larger than that of the corresponding, conventional electron-induced Auger electron emission.
引用
收藏
页码：1256 / 1261
页数：6
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