CHARACTERIZATION OF OXIDATION-INDUCED STACKING-FAULTS IN SOI STRUCTURES BY A NEW CHEMICAL ETCHING PROCESS

被引：0
|
作者：
TSAMIS, C
TSOUKALAS, D
GUILLEMOT, N
STOEMENOS, J
MARGAIL, J
机构：
[1] NCSR DEMOCRITOS,INST MICROELECTR,GR-15310 ATHENS,GREECE
[2] UNIV THESALONIKI,DEPT PHYS,GR-54006 SALONIKA,GREECE
[3] CEN,LETI,F-38041 GRENOBLE,FRANCE
来源：
SEMICONDUCTOR SCIENCE AND TECHNOLOGY | 1992年 / 7卷 / 1A期
关键词：
D O I：
10.1088/0268-1242/7/1A/037
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
The observation of oxidation-induced stacking faults (OISFS) in SIMOX structures with an optical microscope is achieved with the aid of a new method consisting of chemical etching and HF decoration. Comparison of SF lengths obtained by this method with transmission electron microscope measurements shows very good agreement. As an illustration we compare the SF lengths obtained in SIMOX structures with those obtained in bulk silicon under the same oxidation conditions.
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页码：A193 / A195
页数：3
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