共 50 条
- [9] A MODEL FOR THE FORMATION OF OXIDATION-INDUCED STACKING-FAULTS IN CZOCHRALSKI SILICON JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1995, 34 (5B): : L597 - L599
- [10] CORRELATION BETWEEN THE DIFFUSION OF BORONS ATOMS AND THE GROWTH KINETICS OF OXIDATION-INDUCED STACKING-FAULTS REVUE DE PHYSIQUE APPLIQUEE, 1978, 13 (12): : 797 - 801