CONTROL OF RESIDUAL IMPURITIES IN VERY HIGH-PURITY GAAS GROWN BY ORGANOMETALLIC VAPOR-PHASE EPITAXY

被引：37

|

作者：

SHASTRY, SK

ZEMON, S

KENNESON, DG

LAMBERT, G

机构：

来源：

APPLIED PHYSICS LETTERS | 1988年 / 52卷 / 02期

关键词：

D O I：

10.1063/1.99034

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

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页码：150 / 152

页数：3

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