GROWTH AND CHARACTERIZATION OF HIGH-CURRENT DENSITY, HIGH-SPEED RESONANT-TUNNELING DIODES IN THE INAS/ALSB MATERIAL SYSTEM

被引：0
|
作者：
SODERSTROM, JR
MCGILL, TC
BROWN, ER
PARKER, CD
MAHONEY, LJ
YAO, JY
机构：
[1] CALTECH,APPL PHYS LAB,PASADENA,CA 91125
[2] MIT,LINCOLN LAB,LEXINGTON,MA 02173
[3] CHALMERS UNIV TECHNOL,DEPT PHYS,S-41296 GOTHENBURG,SWEDEN
来源：
JOURNAL OF ELECTRONIC MATERIALS | 1990年 / 19卷 / 07期
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D O I：
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中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
引用
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页码：14 / 14
页数：1
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