HOT-CARRIER EFFECTS IN N-CHANNEL POLYCRYSTALLINE SILICON THIN-FILM TRANSISTORS - A CORRELATION BETWEEN OFF-CURRENT AND TRANSCONDUCTANCE VARIATIONS

被引：55
|
作者：
FORTUNATO, G
PECORA, A
TALLARIDA, G
MARIUCCI, L
REITA, C
MIGLIORATO, P
机构：
[1] ENEA,CRIF,PORTICI,ITALY
[2] GEC MARCONI LTD,HIRST RES CTR,WEMBLEY HA9 7PP,MIDDX,ENGLAND
[3] UNIV CAMBRIDGE,DEPT ENGN,CAMBRIDGE CB2 1PZ,CAMBS,ENGLAND
来源：
IEEE TRANSACTIONS ON ELECTRON DEVICES | 1994年 / 41卷 / 03期
关键词：
D O I：
10.1109/16.275218
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
The application of bias-stresses with high source-drain voltage and different gate voltages in polycrystalline thin-film transistors modifies the transconductance as well as the off current, These effects have been explained in terms of hot-holes injection into the gate insulator causing the formation of trap centers in the oxide and interface states near the drain.
引用
收藏
页码：340 / 346
页数：7
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