HOT-CARRIER EFFECTS IN N-CHANNEL POLYCRYSTALLINE SILICON THIN-FILM TRANSISTORS - A CORRELATION BETWEEN OFF-CURRENT AND TRANSCONDUCTANCE VARIATIONS

被引：55
|
作者：
FORTUNATO, G
PECORA, A
TALLARIDA, G
MARIUCCI, L
REITA, C
MIGLIORATO, P
机构：
[1] ENEA,CRIF,PORTICI,ITALY
[2] GEC MARCONI LTD,HIRST RES CTR,WEMBLEY HA9 7PP,MIDDX,ENGLAND
[3] UNIV CAMBRIDGE,DEPT ENGN,CAMBRIDGE CB2 1PZ,CAMBS,ENGLAND
来源：
IEEE TRANSACTIONS ON ELECTRON DEVICES | 1994年 / 41卷 / 03期
关键词：
D O I：
10.1109/16.275218
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
The application of bias-stresses with high source-drain voltage and different gate voltages in polycrystalline thin-film transistors modifies the transconductance as well as the off current, These effects have been explained in terms of hot-holes injection into the gate insulator causing the formation of trap centers in the oxide and interface states near the drain.
引用
收藏
页码：340 / 346
页数：7
相关论文
共 50 条
  • [1] LEAKAGE CURRENT REDUCTION DUE TO HOT-CARRIER EFFECTS IN N-CHANNEL POLYCRYSTALLINE SILICON THIN-FILM TRANSISTORS
    TALLARIDA, G
    PECORA, A
    FORTUNATO, G
    PLAIS, F
    LEGAGNEUX, P
    KRETZ, T
    PRIBAT, D
    JOURNAL OF NON-CRYSTALLINE SOLIDS, 1995, 187 : 195 - 198
  • [2] Leakage current reduction due to hot carrier effects in n-channel polycrystalline silicon thin film transistors
    Tallarida, G.
    Pecora, A.
    Fortunato, G.
    Plais, F.
    Legagneux, P.
    Kretz, T.
    Pribat, D.
    Journal of Non-Crystalline Solids, 1995, 187
  • [3] Hot-Carrier Degradation in Low-Temperature Polycrystalline Silicon n-Channel Lightly Doped Drain Thin-Film Transistors
    Hirata, Seishiro
    Yamagata, Masahiro
    Satoh, Toshifumi
    Tango, Hiroyuki
    JAPANESE JOURNAL OF APPLIED PHYSICS, 2009, 48 (01)
  • [4] RADIATION EFFECTS ON N-CHANNEL POLYCRYSTALLINE SILICON THIN-FILM TRANSISTORS
    YANG, CK
    LEE, CL
    LEI, TF
    CHERN, HN
    APPLIED PHYSICS LETTERS, 1995, 67 (23) : 3477 - 3479
  • [5] Dynamic hot-carrier induced degradation in n-channel polysilicon thin-film transistors
    Tassis, D. H.
    Hatzopoulos, A. T.
    Arpatzanis, N.
    Dimitriadis, C. A.
    Kamarinos, G.
    MICROELECTRONICS RELIABILITY, 2006, 46 (12) : 2032 - 2037
  • [6] Hot-carrier effects in p-channel polycrystalline silicon thin film transistors
    Mariucci, L.
    Valletta, A.
    Gaucci, P.
    Fortunato, G.
    Templier, F.
    APPLIED PHYSICS LETTERS, 2006, 89 (18)
  • [7] Substrate current and degradation of n-channel polycrystalline silicon thin-film transistors
    Hastas, NA
    Archontas, N
    Dimitriadis, CA
    Kamarinos, G
    Nikolaidis, T
    Georgoulas, N
    Thanailakis, A
    MICROELECTRONICS RELIABILITY, 2005, 45 (02) : 341 - 348
  • [8] Hot-Carrier Effect in Polycrystalline Silicon n-Channel Lightly Doped Drain Thin-Film Transistors with Low n- Impurity Concentration
    Yamagata, Masahiro
    Satoh, Toshifumi
    Tango, Hiroyuki
    JAPANESE JOURNAL OF APPLIED PHYSICS, 2009, 48 (03)
  • [9] ANOMALOUS OFF-CURRENT MECHANISMS IN N-CHANNEL POLY-SI THIN-FILM TRANSISTORS
    MIGLIORATO, P
    REITA, C
    TALLARIDA, G
    QUINN, M
    FORTUNATO, G
    SOLID-STATE ELECTRONICS, 1995, 38 (12) : 2075 - 2079
  • [10] Photon emission and related hot-carrier effects in polycrystalline silicon thin-film transistors
    Farmakis, FV
    Dimitriadis, CA
    Brini, J
    Kamarinos, G
    Gueorguiev, VK
    Ivanov, TE
    JOURNAL OF APPLIED PHYSICS, 1999, 85 (09) : 6917 - 6919
12345