HETEROEPITAXY OF WIDE BANDGAP TERNARY SEMICONDUCTORS

被引：8
|
作者：
BACHMANN, KJ
XING, GC
SCROGGS, JS
TRAN, HT
ITO, K
CASTLEBERRY, H
WOOD, G
机构：
[1] N CAROLINA STATE UNIV,DEPT CHEM ENGN,RALEIGH,NC 27695
[2] N CAROLINA STATE UNIV,DEPT ELECT & COMP ENGN,RALEIGH,NC 27695
[3] N CAROLINA STATE UNIV,DEPT MATH,RALEIGH,NC 27695
来源：
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 1993年 / 32卷
关键词：
HETEROEPITAXY; I-III-VI(2)COMPOUNDS; II-IV-V(2)COMPOUNDS; MOCVD; MBE; LPE; HALIDE TRANSPORT;
D O I：
10.7567/JJAPS.32S3.133
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
[No abstract available]
引用
收藏
页码：133 / 138
页数：6
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