共 50 条
- [1] CALCULATION OF THE CARRIER LIFETIME IN HG1-XZNXTE [J]. INFRARED PHYSICS, 1988, 28 (05): : 311 - 319
- [4] ELECTRICAL CHARACTERIZATION OF AS-GROWN, ANNEALED AND INDIUM-DOPED HG1-XZNXTE FOR X NEAR 0.15 [J]. REVUE DE PHYSIQUE APPLIQUEE, 1989, 24 (08): : 795 - 802
- [5] THE PERFORMANCE OF HG1-XZNXTE PHOTODIODES [J]. APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, 1990, 50 (04): : 379 - 384
- [6] ON THE PERFORMANCE OF HG1-XZNXTE PHOTORESISTORS [J]. ACTA PHYSICA POLONICA A, 1990, 77 (2-3) : 359 - 362