THE PERFORMANCE OF HG1-XZNXTE PHOTODIODES

被引：4

作者：

ROGALSKI, A ^{[1
]}

RUTKOWSKI, J ^{[1
]}

JOZWIKOWSKI, K ^{[1
]}

PIOTROWSKI, J ^{[1
]}

NOWAK, Z ^{[1
]}

机构：

[1] INST PLASMA PHYS & LASER MICROFUS,PL-01489 WARSAW,POLAND

来源：

APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING | 1990年 / 50卷 / 04期

关键词：

72.40.+w; 85.60.Gz;

D O I：

10.1007/BF00323595

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

This paper considers the Hg1-xZnxTe alloy system as a potential material for the fabrication of infrared photodiodes. The influence of different junction current components (diffusion, tunneling and depletion layer currents) on the R0A product of n+-pHg1-xZnxTe photodiodes is analysed. The upper theoretical limits of the R0A product and detectivity are determined. Results of calculations are compared with experimental data reported by other authors and those measured in our laboratory. Preliminary results on related technology and the properties of Hg1-xZnxTe prepared by the ion-etching technique are presented. © 1990 Springer-Verlag.

引用

页码：379 / 384

页数：6

共 50 条

[1] ON THE PERFORMANCE OF HG1-XZNXTE PHOTORESISTORS
JOZWIKOWSKI, K
ROGALSKI, A
PIOTROWSKI, J
[J]. ACTA PHYSICA POLONICA A, 1990, 77 (2-3) : 359 - 362
[2] CALCULATION OF THE CARRIER LIFETIME IN HG1-XZNXTE
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PIOTROWSKI, J
[J]. INFRARED PHYSICS, 1988, 28 (05): : 311 - 319
[3] MICROHARDNESS OF HG1-XCDXTE AND HG1-XZNXTE
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[4] HG1-XZNXTE AS A POTENTIAL INFRARED DETECTOR MATERIAL
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[J]. PROGRESS IN QUANTUM ELECTRONICS, 1989, 13 (04) : 299 - 353
[5] P-to-n conversion in Hg1-xZnxTe
Laboratoire de Physique des Solides, INSA, 20, Avenue des Buttes de Coesmes, F-35043 Rennes Cedex, France
不详
[J]. Semicond Sci Technol, 4 (335-340):
[6] PROPERTIES OF HG1-XZNXTE SOLID-SOLUTIONS
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[J]. JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS, 1991, 2 (03) : 171 - 173
[7] CHARACTERIZATION OF FLASH EVAPORATED HG1-XZNXTE FILMS
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JAIN, M
SEHGAL, HK
[J]. INFRARED PHYSICS, 1990, 30 (03): : 285 - 290
[8] HG1-XCDXTE/HG1-XZNXTE SUPERLATTICES WITH CONSTANT HG CONTENT
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AUSTIN, RF
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BRENNAN, S
[J]. APPLIED PHYSICS LETTERS, 1989, 54 (15) : 1466 - 1468
[9] ACCEPTOR LEVEL IN NARROW GAP HG1-XZNXTE
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TRIBOULET, R
ROLLAND, S
LASBLEY, A
[J]. PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1991, 128 (01): : K27 - K32
[10] INFRARED-SPECTROSCOPY OF HG1-XZNXTE ALLOYS
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SUN, CY
YANG, TR
[J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 1995, 34 (9A): : 4687 - 4693

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