THE PERFORMANCE OF HG1-XZNXTE PHOTODIODES

被引：4

作者：

ROGALSKI, A ^{[1
]}

RUTKOWSKI, J ^{[1
]}

JOZWIKOWSKI, K ^{[1
]}

PIOTROWSKI, J ^{[1
]}

NOWAK, Z ^{[1
]}

机构：

[1] INST PLASMA PHYS & LASER MICROFUS,PL-01489 WARSAW,POLAND

来源：

APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING | 1990年 / 50卷 / 04期

关键词：

72.40.+w; 85.60.Gz;

D O I：

10.1007/BF00323595

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

This paper considers the Hg1-xZnxTe alloy system as a potential material for the fabrication of infrared photodiodes. The influence of different junction current components (diffusion, tunneling and depletion layer currents) on the R0A product of n+-pHg1-xZnxTe photodiodes is analysed. The upper theoretical limits of the R0A product and detectivity are determined. Results of calculations are compared with experimental data reported by other authors and those measured in our laboratory. Preliminary results on related technology and the properties of Hg1-xZnxTe prepared by the ion-etching technique are presented. © 1990 Springer-Verlag.

引用

页码：379 / 384

页数：6

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