STRAIN EFFECTS IN INSB P+/N DIODES AND METAL-INSULATOR-SEMICONDUCTOR DEVICES

被引：0
|
作者：
SUN, WG
机构：
来源：
JOURNAL OF APPLIED PHYSICS | 1991年 / 69卷 / 04期
关键词：
D O I：
暂无
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
An InSb metal-insulator-semiconductor device has been used to investigate the influence of external strain on the shift of the I-V characteristics of an InSb diode. Measured flatband voltage change of C-V characteristics and calculated gate voltage increment owing to stresses have been compared. A simple estimate of external strain of the beam deflection was described. The relationships between external strain and short current, dynamic resistance and open circuit voltage have been shown. A brief discussion of effects in InSb I-V characteristics is given.
引用
收藏
页码：2673 / 2675
页数：3
相关论文
共 50 条
  • [31] CURRENT MULTIPLICATION IN METAL-INSULATOR-SEMICONDUCTOR (MIS) TUNNEL-DIODES
    GREEN, MA
    SHEWCHUN, J
    SOLID-STATE ELECTRONICS, 1974, 17 (04) : 349 - 365
  • [32] METAL-INSULATOR-SEMICONDUCTOR STRUCTURES
    YAMAZAKI, S
    AMERICAN CERAMIC SOCIETY BULLETIN, 1984, 63 (08): : 1011 - 1011
  • [33] METAL-INSULATOR-SEMICONDUCTOR STRUCTURES
    YAMAZAKI, S
    AMERICAN CERAMIC SOCIETY BULLETIN, 1985, 64 (12): : 1585 - 1589
  • [34] Infrared emission from Ge metal-insulator-semiconductor tunneling diodes
    Liao, M. H.
    Cheng, T. -H.
    Liu, C. W.
    APPLIED PHYSICS LETTERS, 2006, 89 (26)
  • [35] Light-emitting diodes based on a metal-insulator-semiconductor structure
    Katok, VB
    Panfilov, MI
    Chaika, GE
    SEMICONDUCTORS, 1997, 31 (06) : 593 - 594
  • [36] Series resistance calculation for the metal-insulator-semiconductor Schottky barrier diodes
    Saglam, M
    Ayyildiz, E
    Gumus, A
    Turut, A
    Efeoglu, H
    Tuzemen, S
    APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, 1996, 62 (03): : 269 - 273
  • [37] Metal-Insulator-Semiconductor Photodetectors
    Lin, Chu-Hsuan
    Liu, Chee Wee
    SENSORS, 2010, 10 (10) : 8797 - 8826
  • [38] THE CONTRIBUTION OF BULK STATES TO THE AC CONDUCTANCE OF METAL-INSULATOR-SEMICONDUCTOR DIODES
    BRUNSON, KM
    SANDS, D
    THOMAS, CB
    REEHAL, HS
    JOURNAL OF APPLIED PHYSICS, 1987, 62 (01) : 185 - 189
  • [39] Interface effects in ZnO metal-insulator-semiconductor and metal-semiconductor structures
    Frenzel, H.
    von Wenckstem, H.
    Lajn, A.
    Brandt, M.
    Biehne, G.
    Hochmuth, H.
    Lorenz, M.
    Grundmann, M.
    PHYSICS OF SEMICONDUCTORS, 2009, 1199 : 469 - 470
  • [40] THE EFFECTS OF ANNEALING METAL-INSULATOR-SEMICONDUCTOR DIODES EMPLOYING A THERMAL NITRIDE-INP INTERFACE
    HIROTA, Y
    OKAMURA, M
    KOBAYASHI, T
    JOURNAL OF APPLIED PHYSICS, 1982, 53 (01) : 536 - 540
12345