ALLOY-ASSISTED ANGER RECOMBINATION IN TERNARY III-V COMPOUNDS

被引：0
|
作者：
HAUG, A
机构：
来源：
PHYSICAL REVIEW B | 1994年 / 50卷 / 16期
关键词：
D O I：
10.1103/PhysRevB.50.12168
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
引用
收藏
页码：12168 / 12170
页数：3
相关论文
共 50 条
  • [21] STOICHIOMETRY OF III-V COMPOUNDS
    NISHIZAWA, J
    OYAMA, Y
    MATERIALS SCIENCE & ENGINEERING R-REPORTS, 1994, 12 (6-8): : 273 - 426
  • [22] STOICHIOMETRY OF III-V COMPOUNDS
    NISHIZAWA, J
    MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, 1993, 21 (2-3): : 107 - 119
  • [23] Nanocrystals of III-V compounds
    不详
    OPTICAL PROPERTIES OF SEMICONDUCTOR QUANTUM DOTS, 1997, 136 : 199 - 208
  • [24] PROPOSAL FOR CRITERION ON DEFORMATION OF III-V TERNARY ALLOY CRYSTAL-LATTICE
    OOSAKA, F
    SUGANO, T
    JAPANESE JOURNAL OF APPLIED PHYSICS, 1975, 14 (11) : 1835 - 1836
  • [25] ALLOY SCATTERING MOBILITY IN III-V TERNARY ALLOY SEMICONDUCTORS WITH NONRANDOM ATOM ARRANGEMENT.
    Ichimura, Masaya
    Sasaki, Akio
    Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes, 1987, 26 (05): : 776 - 777
  • [26] Thermal etching of binary and ternary III-V compounds under vacuum conditions
    Alexeev, AN
    Karpov, SY
    Maiorov, MA
    Myachin, VE
    Pogorelsky, YV
    Sokolov, IA
    JOURNAL OF CRYSTAL GROWTH, 1996, 166 (1-4) : 167 - 171
  • [27] OMVPE growth of III-V compounds and ternary alloys for opto-electronics
    Bose, DN
    Bhattacharya, P
    Kumar, A
    Pal, D
    Bhunia, S
    SEMICONDUCTOR DEVICES, 1996, 2733 : 307 - 314
  • [28] APPLICATIONS OF TERNARY III-V COMPOUNDS TO HIGH-SPEED MICROWAVE MODULATION
    IMMORLICA, AA
    PEARSON, GL
    IEEE TRANSACTIONS ON ELECTRON DEVICES, 1975, 22 (10) : 829 - 836
  • [29] Empirical rule for band offsets between III-V alloy compounds
    1600, (74):
  • [30] CHEMICAL-POTENTIALS OF CONSTITUENT COMPOUNDS IN III-V ALLOY SEMICONDUCTORS
    ICHIMURA, M
    WADA, T
    JOURNAL OF CRYSTAL GROWTH, 1989, 97 (3-4) : 542 - 550
12345