共 50 条
- [41] ABSORPTIVITY OF WATER-VAPOR FOR 10.6 MU-M RADIATION [J]. AIAA JOURNAL, 1982, 20 (06) : 863 - 864
- [42] LOSSES IN BEO CERAMIC WAVEGUIDES IN THE REGION OF 10.6 MU-M [J]. KVANTOVAYA ELEKTRONIKA, 1984, 11 (03): : 543 - 551
- [43] QUANTITATIVE HETERODYNE EXPERIMENT WITH EXTRINSIC SILICON AT 10.6 MU-M [J]. INFRARED PHYSICS, 1976, 16 (1-2): : 51 - 54
- [44] ABSORPTION OF THIN-FILM MATERIALS AT 10.6 MU-M [J]. APPLIED OPTICS, 1975, 14 (12): : 3043 - 3046
- [45] LASER ANNEALING OF SILICON-WAFERS AT 10.6 MU-M [J]. PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1981, 64 (01): : 407 - 412
- [48] HIGH-SPEED HGCDTE PHOTODIODES AT 10.6 MU-M [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1973, ED20 (12) : 1175 - 1175
- [49] LASER DAMAGE IN OPTICAL-MATERIALS AT 10.6 MU-M [J]. GEC-JOURNAL OF SCIENCE & TECHNOLOGY, 1982, 48 (03): : 141 - 151