HIGH-SPEED AND ULTRALOW-CHIRP 1.55 MU-M MULTIQUANTUM WELL LAMBDA/4-SHIFTED DFB LASERS

被引:32
|
作者
UOMI, K
TSUCHIYA, T
NAKANO, H
AOKI, M
SUZUKI, M
CHINONE, N
机构
[1] Central Research Laboratory, Hitachi, Ltd., Kokubunji, Tokyo
关键词
D O I
10.1109/3.89996
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
A high-speed ultralow-chirp 1.55-mu-m MQW lambda/4-shifted DFB laser is demonstrated by employing low capacitance structure and by the optimization of an MQW structure in an active layer. A highest 3 dB bandwidth of 14 GHz as an MQW-DFB laser was achieved, and a record chirp width of 3.4 angstrom (20 dB down full width) was also achieved at 10 Gb/s direct modulation. In addition, kL dependence of chirp width is identified by the adiabatic chirping width is identified by the adiabatic chirping due to the spatial hole burning along a laser axis. From the systematic investigation of the nonlinear gain coefficient epsilon of MQW lasers as well as bulk lasers, it is suggested that the physical origin of nonlinear damping can be explained by the spectral hole burning theory.
引用
收藏
页码:1705 / 1713
页数:9
相关论文
共 50 条
  • [31] 1.55 MU-M STRAINED-LAYER MULTIPLE-QUANTUM-WELL DFB-LASERS WITH LOW CHIRP AND LOW DISTORTIONS FOR OPTICAL ANALOG CATV DISTRIBUTION-SYSTEMS
    CEBULLA, U
    BOUAYAD, J
    HAISCH, H
    KLENK, M
    LAUBE, G
    MAYER, HP
    WEINMANN, R
    ZIELINSKI, E
    FIBER AND INTEGRATED OPTICS, 1994, 13 (03) : 241 - 245
  • [32] HIGH-SPEED INTENSITY MODULATION OF 1.5 MU-M DBR LASERS WITH WAVELENGTH TUNING
    KANO, F
    FUKUDA, M
    SATO, K
    OE, K
    IEEE JOURNAL OF QUANTUM ELECTRONICS, 1990, 26 (08) : 1340 - 1346
  • [33] HIGH-SPEED LAMBDA=1.3 MU-M METAL-SEMICONDUCTOR-METAL PHOTODETECTORS ON GAAS
    SACKS, RN
    ADE, RW
    BOSSI, DE
    BASILICA, RP
    EICHLER, DW
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1993, 11 (03): : 938 - 940
  • [34] HIGH-SPEED 1.55-MU-M GAINASP-INP DFB LASER WITH SIMPLE MESA STRUCTURE
    MATSUMOTO, K
    KINOSHITA, J
    SUHARA, H
    TANAKA, A
    SHIRAISHI, K
    MORINAGA, M
    ELECTRONICS LETTERS, 1988, 24 (02) : 117 - 119
  • [35] INTERVALENCE BAND ABSORPTION-COEFFICIENT MEASUREMENTS IN BULK LAYER, STRAINED AND UNSTRAINED MULTIQUANTUM-WELL 1.55 MU-M SEMICONDUCTOR-LASERS
    JOINDOT, I
    BEYLAT, JL
    ELECTRONICS LETTERS, 1993, 29 (07) : 604 - 606
  • [36] 1.5-LESS-THAN-LAMBDA-LESS-THAN-1.7 MU-M STRAINED MULTIQUANTUM WELL INGAAS/INGAASP DIODE-LASERS
    BOUR, DP
    MARTINELLI, RU
    ENSTROM, RE
    STEWART, TR
    DIGIUSEPPE, NG
    HAWRYLO, FZ
    COOPER, DB
    ELECTRONICS LETTERS, 1992, 28 (01) : 37 - 39
  • [37] LOW-THRESHOLD AND HIGH-SPEED 1.5 MU-M COMPRESSIVE-STRAINED MULTIQUANTUM WELL 4-WAVELENGTH DISTRIBUTED-FEEDBACK LASER ARRAYS
    ZAH, CE
    CHEUNG, KW
    MENOCAL, SG
    BHAT, R
    IQBAL, MZ
    FAVIRE, F
    ANDREADAKIS, NC
    LIN, PSD
    GOZDZ, AS
    KOZA, MA
    LEE, TP
    ELECTRONICS LETTERS, 1991, 27 (12) : 1040 - 1042
  • [38] HIGH-SPEED TRAVELING-WAVE DIRECTIONAL COUPLER SWITCH MODULATOR FOR LAMBDA= 1.32 MU-M
    ALFERNESS, RC
    JOYNER, CH
    BUHL, LL
    KOROTKY, SK
    IEEE JOURNAL OF QUANTUM ELECTRONICS, 1983, 19 (09) : 1339 - 1341
  • [39] HIGH-SPEED 1.55 MU-M SINGLE-LONGITUDINAL-MODE RIDGE WAVEGUIDE C-3 LASER
    KAMINOW, IP
    KO, JS
    LINKE, RA
    STULZ, LW
    ELECTRONICS LETTERS, 1983, 19 (19) : 784 - 785
  • [40] HIGH-SPEED, INGAASP/INP MULTIPLE QUANTUM-WELL, 1.55-MU-M SINGLEMODE MODULATOR
    DEVAUX, F
    BIGAN, E
    ROSE, B
    MCKEE, M
    HUET, F
    CARRE, M
    ELECTRONICS LETTERS, 1991, 27 (21) : 1926 - 1927