Preparation of (001) ZnSe surfaces for homoepitaxy

被引:0
|
作者
Storm, S [1 ]
Neumann, W [1 ]
Niehus, H [1 ]
机构
[1] Freiton Wafer GmbH & Co KG, Siemens AG, D-91052 Erlangen, Germany
来源
GROWTH, CHARACTERISATION AND APPLICATIONS OF BULK II-VIS | 1999年 / 78卷
关键词
(001) ZnSe substrate; surface treatment technology; subsurface damage; morphology;
D O I
暂无
中图分类号
TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
As a function of material-specific properties a multiple substrate treatment (MST) for preparation of (001) ZnSe surfaces for homoepitaxy was developed including cutting, mechanical processing, chemo-mechanical polishing procedure and a final step of chemical polishing. The resulting average roughness of the treated surfaces investigated by atomic force microscopy is less than 1 nm when MST is completed. High-resolution X-ray diffraction topography has been carried out to detect the underlying structural degradation caused by mechanical and chemo-mechanical polishing. The thickness of the damaged layer determined by high-resolution X-ray diffraction rocking curve measurements using 311 reflection (penetration depth approximate to 800 nm) is about 10 mu m and can be removed by means of a final chemical polishing step. (C) 1999 Elsevier Science B.V. All rights reserved.
引用
收藏
页码:517 / 522
页数:6
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