OXYGEN PRECIPITATION EFFECTS ON DEFORMATION OF DISLOCATION-FREE SILICON

被引：24
|
作者：
PATEL, JR
CHAUDHURI, AR
机构：
来源：
JOURNAL OF APPLIED PHYSICS | 1962年 / 33卷 / 07期
关键词：
D O I：
10.1063/1.1728931
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
引用
收藏
页码：2223 / &
相关论文
共 50 条
  • [1] PRECIPITATION OF OXYGEN IN DISLOCATION-FREE SILICON
    TEMPELHOFF, K
    SPIEGELBERG, F
    GLEICHMANN, R
    [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1977, 124 (03) : C116 - C116
  • [2] PRECIPITATION OF OXYGEN IN DISLOCATION-FREE SILICON
    TEMPELHOFF, K
    SPIEGELBERG, F
    GLEICHMANN, R
    WRUCK, D
    [J]. PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1979, 56 (01): : 213 - 223
  • [3] KINETICS OF OXYGEN PRECIPITATION IN DISLOCATION-FREE SILICON
    FREELAND, PE
    JACKSON, KA
    LOWE, CW
    PATEL, JR
    [J]. BULLETIN OF THE AMERICAN PHYSICAL SOCIETY, 1976, 21 (03): : 229 - 229
  • [4] DIFFUSION LIMITED PRECIPITATION OF OXYGEN IN DISLOCATION-FREE SILICON
    BINNS, MJ
    BROWN, WP
    WILKES, JG
    NEWMAN, RC
    LIVINGSTON, FM
    MESSOLORAS, S
    STEWART, RJ
    [J]. APPLIED PHYSICS LETTERS, 1983, 42 (06) : 525 - 527
  • [5] INFLUENCE OF GROWTH MICRODEFECTS ON OXYGEN PRECIPITATION IN DISLOCATION-FREE SILICON
    VORONKOV, VV
    MILVIDSKII, MG
    REZNIK, VY
    [J]. KRISTALLOGRAFIYA, 1990, 35 (05): : 1205 - 1211
  • [6] OXYGEN PRECIPITATION AND STACKING-FAULT FORMATION IN DISLOCATION-FREE SILICON
    PATEL, JR
    JACKSON, KA
    REISS, H
    [J]. JOURNAL OF APPLIED PHYSICS, 1977, 48 (12) : 5279 - 5288
  • [7] AN INFRARED AND NEUTRON-SCATTERING ANALYSIS OF THE PRECIPITATION OF OXYGEN IN DISLOCATION-FREE SILICON
    LIVINGSTON, FM
    MESSOLORAS, S
    NEWMAN, RC
    PIKE, BC
    STEWART, RJ
    BINNS, MJ
    BROWN, WP
    WILKES, JG
    [J]. JOURNAL OF PHYSICS C-SOLID STATE PHYSICS, 1984, 17 (34): : 6253 - 6276
  • [8] INFLUENCE OF CARBON ON THERMAL-DONOR FORMATION AND OXYGEN PRECIPITATION IN DISLOCATION-FREE SILICON
    BABITSKII, YM
    GRINSHTEIN, PM
    ILIN, MA
    MILVIDSKII, MG
    ORLOVA, EV
    RYTOVA, NS
    [J]. INORGANIC MATERIALS, 1985, 21 (05): : 645 - 649
  • [9] Effect of Carbon on Thermal Donor Formation and Oxygen Precipitation in Dislocation-Free Silicon.
    Babitskii, Yu.M.
    Grinshtein, P.M.
    Il'in, M.A.
    Mil'vidskii, M.G.
    Orlova, E.V.
    Rytova, N.S.
    [J]. Neorganiceskie materialy, 1985, 21 (05): : 744 - 748
  • [10] PRECIPITATION OF A SOLID-SOLUTION OF GOLD IN DISLOCATION-FREE SILICON
    BAGRAEV, NT
    VLASENKO, LS
    KARPOV, YA
    TUROVSKII, VM
    [J]. SOVIET PHYSICS SEMICONDUCTORS-USSR, 1983, 17 (02): : 175 - 177
12345