PROPERTIES OF A HIGH-MOBILITY 2-DIMENSIONAL ELECTRON-GAS IN MODULATION-DOPED QUANTUM-WELL STRUCTURES OF GAINAS/ALINAS AND GAINAS/(GA1-XALX)INAS HETEROSTRUCTURES

被引：5
|
作者：
KRAAK, W
OELZE, B
KUNZEL, M
BACH, HG
BOTTGER, J
NAKOV, V
SCHULZE, D
GOBSCH, G
机构：
[1] HEINRICH HERTZ INST NACHRICHTENTECH BERLIN GMBH,D-10587 BERLIN,GERMANY
[2] TECH UNIV ILMENAU,INST PHYS,D-98693 ILMENAU,GERMANY
来源：
PHYSICA STATUS SOLIDI B-BASIC RESEARCH | 1994年 / 183卷 / 02期
关键词：
D O I：
10.1002/pssb.2221830210
中图分类号：
O469 [凝聚态物理学];
学科分类号：
070205 ;
摘要：
The electronic and magnetotransport properties of the two-dimensional electron gas (2DEG) in MBE-grown GaInAs/AlInAs and GaInAs/(Ga1-xAlx)InAs heterostructures are investigated in magnetic fields up to 12 T. The quantum oscillations of the magnetoresistivity (SdH effect) and the observation of pronounced quantum Hall effect demonstrate the existence of a high-mobility 2DEG in the GaInAs potential well. The characteristic parameters of the electronic band structure of the 2DEG are determined and are compared with self-consistent solutions of the coupled Poisson and Schrodinger equations. The influence of hydrostatic pressure on the magnetotransport properties is studied. A surprisingly weak change of the subband occupation with pressure is revealed.
引用
收藏
页码：437 / 453
页数：17
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