2-DIMENSIONAL ELECTRON-GAS EFFECTS IN THE ELECTROMODULATION SPECTRA FROM A PSEUDOMORPHIC GAALAS/INGAAS/GAAS MODULATION-DOPED QUANTUM-WELL STRUCTURE

被引:4
|
作者
QIANG, H
YIN, YC
YAN, D
POLLAK, FH
GUMBS, G
HUANG, D
NOBLE, TF
机构
[1] CUNY BROOKLYN COLL,DEPT PHYS,BROOKLYN,NY 11210
[2] CUNY HUNTER COLL,DEPT PHYS & ASTRON,NEW YORK,NY 10021
[3] JOHNS HOPKINS UNIV,DEPT MAT SCI & ENGN,BALTIMORE,MD 21218
基金
美国国家科学基金会;
关键词
D O I
10.1016/0022-2313(94)90286-0
中图分类号
O43 [光学];
学科分类号
070207 ; 0803 ;
摘要
The two-dimensional electron gas in a GaAlAs/InGaAs/GaAs modulation-doped quantum well was studied using contactless electroreflectance (17 K < T < 351 K) and photoluminescence (300 K). A many-body calculation of the electromodulation line shape, including observation of the Fermi edge transition up to 152 K, is in excellent agreement with experiment.
引用
收藏
页码:819 / 823
页数:5
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