EXTREMELY LOW-LOSS 4 X 4 GAAS/ALGAAS OPTICAL MATRIX SWITCH

被引：10
|
作者：
HAMAMOTO, K
SUGOU, S
KOMATSU, K
KITAMURA, M
机构：
[1] Opto-Electronics Research Laboratories, NEC Corporation, Tsukuba City, Ibaraki 305
来源：
ELECTRONICS LETTERS | 1993年 / 29卷 / 17期
关键词：
OPTICAL SWITCHES; INTEGRATED OPTICS;
D O I：
10.1049/el:19931053
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
A 4 x 4 GaAs/AlGaAs optical matrix switch with an extremely low loss of 1.6 dB has been developed. This low loss switch was achieved by layer structure modification, to reduce free-carrier absorption, reduction of plasma damage while dry etching, and an improvement in the crystal quality.
引用
收藏
页码：1580 / 1582
页数：3
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