HIGH-SPEED BULK INGAASP-INP ELECTROABSORPTION MODULATORS WITH BANDWIDTH IN EXCESS OF 20 GHZ

被引：15
|
作者：
MAK, G
ROLLAND, C
FOX, KE
BLAAUW, C
机构：
[1] Advanced Technology Laboratory, Bell-Northern Research Ltd., Ottawa, Ont.
来源：
IEEE PHOTONICS TECHNOLOGY LETTERS | 1990年 / 2卷 / 10期
关键词：
D O I：
10.1109/68.60774
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Bulk InGaAsP-InP electroabsorption optical modulators with high extinction ratio, low drive voltage, and high modulation bandwidth at λ = 1.3 μm are reported. The devices have a tapered fiber-to-modulator-to-tapered fiber extinction ratio greater than 20 dB at a drive voltage of < 5 V. Very low capacitance modulators (< 0.2 pF) were fabricated using SiO2 bonding pad isolation, resulting in a measured electrical modulation bandwidth in excess of 20 GHz, the highest yet reported for bulk devices. © 1990 IEEE
引用
收藏
页码：730 / 733
页数：4
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