A RHEED STUDY OF THE INITIAL GROWTH OF AG ON THE SI(001) SURFACE

The growth of Ag on Si(001) 2 x 1 surfaces was studied by reflection high-energy electron diffraction (RHEED). An oscillation of the specular beam intensity was observed using a nearly single domain surface of Si(001) 2 x 1 as a function of the Ag coverage at the substrate temperature T(s) = RT (room temperature). Streaks, along the [110] direction for the 2 x 1 surface, in the pattern, developed with increasing Ag coverage up to approximately 1 ML (monolayer). The intensity of the specular beam spot increased immediately after the start of Ag deposition, and decreased to a constant value beyond approximately 1 ML. The RHEED pattern revealed that one-dimensional Ag atomic chains wer formed along the dimer rows of the Si surface. For more than approximately 1.5 ML coverage, Ag islands of the (111) orientation grew epitaxially.