RHEED investigations of surface diffusion on Si(001)

被引：0
|
作者：
Nutzel, JF
Brichzin, P
Abstreiter, G
机构：
[1] Walter-Schottky-Institut, Techn. Univ. München, D-85748 Garching, Am Coulombwall
来源：
APPLIED SURFACE SCIENCE | 1996年 / 102卷
关键词：
D O I：
10.1016/0169-4332(96)00024-4
中图分类号：
O64 [物理化学（理论化学）、化学物理学];
学科分类号：
070304 ; 081704 ;
摘要：
We have performed RHEED measurements over a wide range of growth temperatures and rates on Si(001) substrates. The measurements of the equilibrium intensity, the oscillation amplitude and the damping constants of the oscillations show a very systematic behaviour. RHEED oscillations at a growth rate of 0.1 Angstrom/s are found for a wide temperature region between 300 and 750 K. This temperature window shifts systematically to higher temperatures for higher growth rates.
引用
收藏
页码：78 / 81
页数：4
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