TRANSVERSE MAGNETORESISTANCE AND HALL EFFECT IN P-TYPE GERMANIUM

被引：5

作者：

GALLAGHER, JW

机构：

来源：

PHYSICAL REVIEW | 1968年 / 171卷 / 03期

关键词：

D O I：

10.1103/PhysRev.171.987

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

引用

页码：987 / +

页数：1

共 50 条

[1] TRANSVERSE HALL AND MAGNETORESISTANCE EFFECTS IN P-TYPE GERMANIUM
WILLARDSON, RK
HARMAN, TC
BEER, AC
[J]. PHYSICAL REVIEW, 1954, 96 (06): : 1512 - 1518
[2] TRANSVERSE MAGNETORESISTANCE IN P-TYPE GERMANIUM
JOHANNESSEN, JS
[J]. PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 1972, 13 (02): : 537 - +
[3] HALL EFFECT IN P-TYPE GERMANIUM
GOLDBERG, C
DAVIS, RE
[J]. PHYSICAL REVIEW, 1955, 98 (04): : 1192 - 1192
[4] TRANSVERSE MAGNETORESISTANCE AND HALL EFFECT IN P-TYPE TELLURIUM IN STRONG MAGNETIC FIELDS
MIURA, N
YOSHIZAKI, R
TANAKA, S
[J]. SOLID STATE COMMUNICATIONS, 1971, 9 (11) : 779 - +
[5] LONGITUDINAL HALL EFFECT IN P-TYPE GERMANIUM
EFIMOV, VV
KRAVCHEN.AF
SARDARYA.VS
[J]. SOVIET PHYSICS SEMICONDUCTORS-USSR, 1969, 2 (12): : 1448 - &
[6] Hall effect and magnetoresistance in p-type ferromagnetic semiconductors
Dietl, T
Matsukura, F
Ohno, H
Cibert, J
Ferrand, D
[J]. RECENT TRENDS IN THEORY OF PHYSICAL PHENOMENA IN HIGH MAGNETIC FIELDS, 2003, 106 : 197 - 210
[7] LONGITUDINAL MAGNETORESISTANCE OF P-TYPE GERMANIUM
VESELAGO, VG
GLUSHKOV, MV
LEONOV, YS
SHOTOV, AP
[J]. SOVIET PHYSICS SOLID STATE,USSR, 1971, 13 (01): : 184 - +
[8] EVEN HALL-EFFECT IN P-TYPE GERMANIUM
VASHKYAV.R
DENENE, M
REPSHAS, K
[J]. SOVIET PHYSICS SEMICONDUCTORS-USSR, 1972, 6 (06): : 983 - &
[9] PIEZO-HALL EFFECT IN P-TYPE GERMANIUM
INOUE, M
IKEDA, M
[J]. JOURNAL OF THE PHYSICAL SOCIETY OF JAPAN, 1965, 20 (08) : 1542 - &
[10] MAGNETORESISTANCE IN UNIAXIALLY STRAINED P-TYPE GERMANIUM
SUGIYAMA, K
[J]. JOURNAL OF THE PHYSICAL SOCIETY OF JAPAN, 1963, 18 (10) : 1555 - &

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