PHASE-FORMATION AND CHARACTERISTICS OF RF-SPUTTERED BARIUM-STRONTIUM TITANATE THIN-FILMS ON VARIOUS BOTTOM LAYERS

被引：0
|
作者：
WON, JH [1 ]
PAEK, SH [1 ]
HWANG, YS [1 ]
KIM, KK [1 ]
CHO, YS [1 ]
机构：
[1] HYUNDAI ELECTR,KYONGGI DO,SOUTH KOREA
来源：
JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS | 1995年 / 6卷 / 03期
关键词：
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
(Ba0.7Sr0.3)TiO3 thin films were deposited by r.f.-magnetron sputtering on Pt/Ti/Si, Pt/TiSi2/Si and Pt/Ti/SiO2/Si substrates, respectively, and annealed at 650 degrees C for 30 s by Rapid Thermal Annealing (RTA). XRD (X-ray diffraction) patterns revealed that the BST films had perovskite structure without preferred orientation. Auger depth profiles of barium-strontium titanate (BST) films on various substrates were performed. In the Pt/Ti/Si and Pt/TiSi2/Si structures, Si diffused into the BST film, but in the Pt/Ti/SiO2/Si structure, the diffusion of Si into the BST film was prevented and the interface between the BST film and the electrode was stable. The dielectric constants were about 310-260 (100 kHz-1 MHz).
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页码：161 / 164
页数：4
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