HOT-ELECTRON TRANSPORT IN GAAS QUANTUM-WELLS - NONDRIFTING HOT PHONONS

被引：34
|
作者：
BALKAN, N
GUPTA, R
DANIELS, ME
RIDLEY, BK
EMENY, M
机构：
[1] Dept. of Phys., Essex Univ., Colchester
来源：
SEMICONDUCTOR SCIENCE AND TECHNOLOGY | 1990年 / 5卷 / 09期
关键词：
D O I：
10.1088/0268-1242/5/9/011
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Experimental data concerning high-field parallel transport in GaAs/GaAlAs quantum well structures are reported. The results strongly suggest that (i) in modulation doped GaAs quantum wells the non-equilibrium LO phonons (hot phonons) are non-drifting, and (ii) in samples with similar 2D electron densities hot phonon effects increase with reduced dimensionality, and hence with increasing 3D electron concentration. Both observations are in excellent agreement with a recent model of high-field transport involving hot phonons.
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页码：986 / 990
页数：5
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