POSITRON-ANNIHILATION INVESTIGATION OF DEFECTS IN SILICON SINGLE-CRYSTALS IRRADIATED WITH XENON IONS

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作者：

GIRKA, AI

KLOPIKOV, EB

SKURATOV, VA

SHISHKIN, AV

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SOVIET PHYSICS SEMICONDUCTORS-USSR | 1989年 / 23卷 / 02期

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O469 [凝聚态物理学];

学科分类号：

070205 ;

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页码：202 / 205

页数：4

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