ISOTHERMAL TOTAL-STRAIN-CONTROLLED CYCLIC DEFORMATION OF GGG-60 IN THE TEMPERATURE-RANGE 20-DEGREES-C-LESS-THAN-OR-EQUAL-TO-T-LESS-THAN-OR-EQUAL-TO-500-DEGREES-C .1.

被引：2

作者：

HALLSTEIN, R ^{[1
]}

LANG, KH ^{[1
]}

LOHE, D ^{[1
]}

MACHERAUCH, E ^{[1
]}

机构：

[1] UNIV KARLSRUHE,INST WERKSTOFFKUNDE 1,D-76128 KARLSRUHE,GERMANY

来源：

MATERIALWISSENSCHAFT UND WERKSTOFFTECHNIK | 1995年 / 26卷 / 01期

关键词：

D O I：

10.1002/mawe.19950260105

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：5 / 13

页数：9

共 48 条

[41] LOW-TEMPERATURE (LESS-THAN-OR-EQUAL-TO-600-DEGREES-C) POLYSILICON THIN-FILM TRANSISTORS HAVING IN-SITU DOPED POLYSILICON SOURCE AND DRAIN CONTACTS
PICHON, L
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IEEE ELECTRON DEVICE LETTERS, 1995, 16 (09) : 376 - 378
[42] LOW-TEMPERATURE (LESS-THAN-OR-EQUAL-TO-600-DEGREES-C) SEMIINSULATING OXYGEN-DOPED SILICON FILMS BY THE PECVD TECHNIQUE FOR LARGE-AREA POWER APPLICATIONS
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BROWN, AO
MADATHIL, SNE
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MICROELECTRONIC ENGINEERING, 1995, 28 (1-4) : 451 - 454
[43] ENHANCED ELECTRICAL QUALITY OF LOW-TEMPERATURE (TDEP-LESS-THAN-OR-EQUAL-TO-800-DEGREES-C) EPITAXIAL SILICON DEPOSITED BY PLASMA-ENHANCED CHEMICAL VAPOR-DEPOSITION
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APPLIED PHYSICS LETTERS, 1988, 53 (10) : 891 - 893
[44] NOVEL LOW-TEMPERATURE (LESS-THAN-OR-EQUAL-TO-300-DEGREES-C) ANNEALING OF AMORPHOUS SI BY SCANNED HIGH-ENERGY (APPROXIMATELY 2.5 MEV) HEAVY-ION BEAM
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KAJIYAMA, K
JAPANESE JOURNAL OF APPLIED PHYSICS, 1982, 21 (01) : 211 - 216
[45] AN OPTIMIZED INSITU ARGON SPUTTER CLEANING PROCESS FOR DEVICE QUALITY LOW-TEMPERATURE (T LESS-THAN-OR-EQUAL-TO 800-DEGREES-C) EPITAXIAL SILICON - BIPOLAR-TRANSISTOR AND PN JUNCTION CHARACTERIZATION
BURGER, WR
REIF, R
JOURNAL OF APPLIED PHYSICS, 1987, 62 (10) : 4255 - 4268
[46] DETERMINATION OF THERMAL-CONDUCTIVITY UP TO 1500-DEGREES-C FOR VALUES OF LAMBDA LESS-THAN-OR-EQUAL-TO 1.5 W.M-1.K-1 BY HOT-WIRE METHOD
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BULLETIN DE LA SOCIETE FRANCAISE DE CERAMIQUE, 1977, (117): : 9 - 13
[47] MECHANISM OF LOW-TEMPERATURE (LESS-THAN-OR-EQUAL-TO-300-DEGREES-C) CRYSTALLIZATION AND AMORPHIZATION FOR THE AMORPHOUS SI LAYER ON THE CRYSTALLINE SI SUBSTRATE BY HIGH-ENERGY HEAVY-ION BEAM IRRADIATION
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[48] MOSSBAUER-SPECTROSCOPY OF HTSC OF YBA2(CU0.99FE0.01)3O7-Y IN T-SIMILAR-OR-EQUAL-TO-20-600-DEGREES-C TEMPERATURE-RANGE
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BOIDACHENKO, IV
TOMCHUK, OV
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KOMAROV, AO
KRUGLOV, VS
PISMA V ZHURNAL TEKHNICHESKOI FIZIKI, 1992, 18 (08): : 58 - 62

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