A SUB-MICRON CMOS PROCESS EMPLOYING TRENCH ISOLATION

被引：1
|
作者：
ROBERTS, MC
BOLBOT, PH
FOSTER, DJ
机构：
来源：
JOURNAL DE PHYSIQUE | 1988年 / 49卷 / C-4期
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D O I：
10.1051/jphyscol:19884111
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学科分类号：
摘要：
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页码：533 / 536
页数：4
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