GROWTH OF HGSE AND HG1-XCDXSE THIN-FILMS BY MOLECULAR-BEAM EPITAXY

被引：18
|
作者：
LANSARI, Y
COOK, JW
SCHETZINA, JF
机构：
[1] Department of Physics, North Carolina State University, Raleigh, 27695-8202, NC
来源：
JOURNAL OF ELECTRONIC MATERIALS | 1993年 / 22卷 / 08期
关键词：
CHARACTERISTICS OF THIN FILMS; HGSE; HGCDSE; MBE; SEMIMETALS;
D O I：
10.1007/BF02817490
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Thin epitaxial films of HgSe and Hg1-xCdxSe (x less-than-or-equal-to 0.34) were successfully grown for the first time by molecular beam epitaxy. Film growth parameters are discussed, and results of structural, electrical, and optical studies are reported.
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页码：809 / 813
页数：5
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