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- [2] PICOSECOND RECOMBINATION OF CHARGED CARRIERS IN GAAS [J]. APPLIED PHYSICS LETTERS, 1986, 48 (15) : 992 - 993
- [3] PICOSECOND TIME-RESOLVED LUMINESCENCE STUDIES OF SURFACE AND BULK RECOMBINATION PROCESSES IN INP [J]. PHYSICAL REVIEW B, 1992, 45 (16): : 9108 - 9119
- [4] PICOSECOND RAMAN-SCATTERING FROM PHOTOEXCITED PLASMAS IN GAAS AND INP - THE IMPORTANT ROLE OF INTERFACIAL RECOMBINATION [J]. PHYSICAL REVIEW B, 1987, 36 (02): : 1316 - 1319
- [6] AUGER RECOMBINATION IN INAS, GASB, INP, AND GAAS [J]. JOURNAL OF APPLIED PHYSICS, 1972, 43 (10) : 4114 - +
- [8] EFFECT OF SURFACE RECOMBINATION ON THE CONTRAST OF PHOTOLUMINESCENCE IMAGES OBTAINED ON LEC GAAS AND INP CRYSTALS [J]. SEMI-INSULATING III-V MATERIALS, MALMO 1988, 1988, : 555 - 560
- [9] Effects of metal ion chemisorption on GaAs surface recombination. Picosecond luminescence decay measurements [J]. Ryba, G.N., 1600, Publ by ACS, Washington (97):
- [10] EFFECTS OF METAL-ION CHEMISORPTION ON GAAS SURFACE RECOMBINATION - PICOSECOND LUMINESCENCE DECAY MEASUREMENTS [J]. JOURNAL OF PHYSICAL CHEMISTRY, 1993, 97 (51): : 13814 - 13819