共 50 条
- [21] EFFECTIVENESS OF AN EXCESS CHARGE IN THE PROCESS OF TURN ON OF p-n-p-n STRUCTURES IN MULTIDIMENSIONAL APPROXIMATION. Soviet physics. Semiconductors, 1980, 14 (07): : 806 - 810
- [22] VARIATION OF SWITCHING TIME OF SILICON P-N-P-N STRUCTURES IRRADIATED BY FAST ELECTRONS PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1985, 89 (02): : K227 - K230
- [23] TURN-ON CONDITION FOR A p-n-p-n STRUCTURE WITH VARIABLE-GAP BASES UNDER TRANSIENT CONDITIONS. Soviet physics. Semiconductors, 1980, 14 (10): : 1191 - 1195
- [25] Turn-off time of p-n-p-n structures in small reverse current and voltage regimes Soviet journal of communications technology & electronics, 1988, 33 (12): : 171 - 173
- [26] SOME NEW POSSIBILITIES OF FAST SWITCHING OF LARGE-AREA P-N-P-N STRUCTURES SOVIET PHYSICS SEMICONDUCTORS-USSR, 1976, 10 (02): : 206 - 208
- [28] NON-UNIDIMENSIONAL EFFECTS IN GATE TURN-ON P-N-P-N-STRUCTURES RADIOTEKHNIKA I ELEKTRONIKA, 1973, 18 (03): : 605 - 616
- [30] A STUDY OF SWITCHING PROCESS OF SILICON P-N-P-N STRUCTURES RADIO ENGINEERING AND ELECTRONIC PHYSICS-USSR, 1966, 11 (12): : 1953 - +