INCREASED EFFECTIVE BARRIER HEIGHTS IN SCHOTTKY DIODES BY MOLECULAR-BEAM EPITAXY OF COSI2 AND GA-DOPED SI ON SI(111)

被引：4
|
作者：
FATHAUER, RW [1 ]
LIN, TL [1 ]
GRUNTHANER, PJ [1 ]
ANDERSSON, PO [1 ]
IANNELLI, JM [1 ]
JAMIESON, DN [1 ]
机构：
[1] CALTECH,JET PROP LAB,DIV APPL PHYS,PASADENA,CA 91109
来源：
JOURNAL OF APPLIED PHYSICS | 1988年 / 64卷 / 08期
关键词：
D O I：
10.1063/1.341315
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
引用
收藏
页码：4082 / 4085
页数：4
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