INCREASED EFFECTIVE BARRIER HEIGHTS IN SCHOTTKY DIODES BY MOLECULAR-BEAM EPITAXY OF COSI2 AND GA-DOPED SI ON SI(111)

被引：4

作者：

FATHAUER, RW ^{[1
]}

LIN, TL ^{[1
]}

GRUNTHANER, PJ ^{[1
]}

ANDERSSON, PO ^{[1
]}

IANNELLI, JM ^{[1
]}

JAMIESON, DN ^{[1
]}

机构：

[1] CALTECH,JET PROP LAB,DIV APPL PHYS,PASADENA,CA 91109

来源：

JOURNAL OF APPLIED PHYSICS | 1988年 / 64卷 / 08期

关键词：

D O I：

10.1063/1.341315

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：4082 / 4085

页数：4

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