共 50 条
- [33] DEPENDENCE OF THE CARRIER LIFETIME IN GOLD-DOPED SILICON ON THE DEGREE OF COMPENSATION SOVIET PHYSICS SEMICONDUCTORS-USSR, 1991, 25 (09): : 944 - 946
- [34] AMPLIFICATION AND OSCILLATION PROPERTIES OF SILICON DIODES WITH A GOLD-DOPED BASE RADIO ENGINEERING AND ELECTRONIC PHYSICS-USSR, 1965, 10 (11): : 1775 - &
- [36] VIBRATION OF ATOMS ON PURE AND GOLD-DOPED SILICON (111) FACES SOVIET PHYSICS SOLID STATE,USSR, 1971, 12 (07): : 1621 - +
- [37] ELECTRICAL PROPERTIES OF GOLD-DOPED DIFFUSED SILICON COMPUTER DIODES BELL SYSTEM TECHNICAL JOURNAL, 1960, 39 (01): : 87 - 104
- [38] CURRENT-INDUCED OPTICAL INHOMOGENEITIES IN GOLD-DOPED SILICON SOVIET PHYSICS SEMICONDUCTORS-USSR, 1974, 8 (03): : 382 - 383