HIGH-ELECTRIC-FIELD GALVANOMAGNETIC EFFECTS IN PIEZOELECTRIC SEMICONDUCTORS

被引：13

作者：

CRANDALL, RS

机构：

来源：

PHYSICAL REVIEW | 1968年 / 169卷 / 03期

关键词：

D O I：

10.1103/PhysRev.169.585

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

引用

页码：585 / +

页数：1

共 50 条

[41] GALVANOMAGNETIC AND THERMOMAGNETIC EFFECTS IN FERROMAGNETIC SEMICONDUCTORS
KORENBLI.IY
LAZARENK.YP
[J]. SOVIET PHYSICS SEMICONDUCTORS-USSR, 1972, 5 (11): : 1850 - &
[42] THEORY OF PHOTOSTIMULATED GALVANOMAGNETIC EFFECTS IN SEMICONDUCTORS
DZHAKSIMOV, E
[J]. SOVIET PHYSICS SEMICONDUCTORS-USSR, 1988, 22 (09): : 1082 - 1083
[43] GALVANOMAGNETIC EFFECTS IN SEMICONDUCTORS WITH DEGENERATE ZONES
BIR, GI
NORMANTAS, E
PIKUS, GE
[J]. SOVIET PHYSICS-SOLID STATE, 1962, 4 (05): : 867 - 877
[44] HIGH-ELECTRIC-FIELD GENERATED BY A PLASMA BELOW THE SURFACE OF A POROUS DUST GRAIN
MILLET, JM
LAFON, JPJ
GUNTHER, E
[J]. COMPTES RENDUS DE L ACADEMIE DES SCIENCES SERIE II, 1993, 317 (09): : 1185 - 1192
[45] CRYOSTAT FOR MEASUREMENT OF GALVANOMAGNETIC EFFECTS IN SEMICONDUCTORS
SOMOGYI, K
PODOR, B
[J]. ACTA TECHNICA ACADEMIAE SCIENTIARUM HUNGARICAE, 1976, 82 (3-4): : 443 - 446
[46] GEOMETRY OF A SAMPLE AND GALVANOMAGNETIC EFFECTS IN SEMICONDUCTORS
AKHIEZER, IT
GUREVICH, YG
ZAKIROV, N
[J]. SEMICONDUCTORS, 1993, 27 (04) : 349 - 352
[47] High-electric-field effects and degradation of A1GaAs/GaAs power HFETs: a numerical study
Sozzi, G
Menozzi, R
[J]. MICROELECTRONICS RELIABILITY, 2002, 42 (01) : 53 - 59
[48] Influence of dislocation on high-electric-field property in semi-insulating GaAs
Kiyama, M
Yamada, M
Tatsumi, M
[J]. SMIC-XIII: 2004 13TH INTERNATIONAL CONFERENCE ON SEMICONDUCTING & INSULATING MATERIALS, 2004, : 7 - 10
[49] Simplified high-electric-field technique for measuring the liquid crystal anchoring strength
Yokoyama, H
Sun, RP
[J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 2000, 39 (1AB): : L45 - L47
[50] CONDUCTIVITY OF SEMICONDUCTORS IN HIGH ELECTRIC-FIELD
BRYKSIN, VV
[J]. FIZIKA TVERDOGO TELA, 1972, 14 (10): : 2902 - &

← 1 2 3 4 5 →