HIGH-ELECTRIC-FIELD GALVANOMAGNETIC EFFECTS IN PIEZOELECTRIC SEMICONDUCTORS

被引：13
|
作者：
CRANDALL, RS
机构：
来源：
PHYSICAL REVIEW | 1968年 / 169卷 / 03期
关键词：
D O I：
10.1103/PhysRev.169.585
中图分类号：
O4 [物理学];
学科分类号：
0702 ;
摘要：
引用
收藏
页码：585 / +
页数：1
相关论文
共 50 条
  • [1] GALVANOMAGNETIC EFFECTS IN SEMICONDUCTORS AT HIGH ELECTRIC FIELDS
    CONWELL, EM
    [J]. PHYSICAL REVIEW, 1961, 123 (02): : 454 - &
  • [2] HIGH-ELECTRIC-FIELD BEHAVIOR OF THE MAGNETOPHONON RESONANCE IN POLAR SEMICONDUCTORS
    IGUCHI, H
    [J]. PHYSICAL REVIEW B, 1993, 47 (12): : 7049 - 7060
  • [3] GALVANOMAGNETIC AND RECOMBINATION EFFECTS IN SEMICONDUCTORS IN A STRONG ELECTRIC-FIELD
    KACHLISHVILI, ZS
    [J]. PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 1976, 33 (01): : 15 - 51
  • [4] BEHAVIOR OF INPFE UNDER HIGH-ELECTRIC-FIELD
    TURKI, K
    PICOLI, G
    VIALLET, JE
    [J]. JOURNAL OF APPLIED PHYSICS, 1993, 73 (12) : 8340 - 8348
  • [5] Investigation of high-electric-field degradation effects in AlGaN/GaN HEMTs
    Faqir, Mustapha
    Verzellesi, Giovanni
    Meneghesso, Gaudenzio
    Zanoni, Enrico
    Fantini, Fausto
    [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 2008, 55 (07) : 1592 - 1602
  • [6] FOOD APPLICATION OF HIGH-ELECTRIC-FIELD PULSES
    KNORR, D
    GEULEN, M
    GRAHL, T
    SITZMANN, W
    [J]. TRENDS IN FOOD SCIENCE & TECHNOLOGY, 1994, 5 (03) : 71 - 75
  • [7] HIGH-FIELD GALVANOMAGNETIC EFFECTS IN COMPENSATED NON-POLAR SEMICONDUCTORS
    BHATTACHARYA, DP
    [J]. PHYSICAL REVIEW B, 1981, 23 (12): : 6668 - 6675
  • [8] High-electric-field poling of nonlinear optical polymers
    Blum, R
    Sprave, M
    Sablotny, J
    Eich, M
    [J]. JOURNAL OF THE OPTICAL SOCIETY OF AMERICA B-OPTICAL PHYSICS, 1998, 15 (01) : 318 - 328
  • [9] The Drift Response to a High-Electric-Field in Carbon Nanotubes
    Vidhi, Rachana
    Tan, Michael L. P.
    Saxena, Tanuj
    Hashim, Abdul Manaf
    Arora, Vijay K.
    [J]. CURRENT NANOSCIENCE, 2010, 6 (05) : 492 - 495
  • [10] GALVANOMAGNETIC EFFECTS IN SEMICONDUCTORS
    DANK, M
    [J]. JOURNAL OF THE FRANKLIN INSTITUTE-ENGINEERING AND APPLIED MATHEMATICS, 1965, 280 (01): : 88 - &
12345