EXTREMELY LOW-NOISE INGAAS/INAIAS HEMT GROWN BY MOCVD

被引：2
|
作者：
FUJITA, S [1 ]
NODA, T [1 ]
WAGAI, A [1 ]
HOSOI, S [1 ]
ASHIZAWA, Y [1 ]
机构：
[1] TOSHIBA CO LTD,CTR MICROELECTR,SAIWAI KU,KAWASAKI 210,JAPAN
来源：
ELECTRONICS LETTERS | 1993年 / 29卷 / 17期
关键词：
CHEMICAL VAPOR DEPOSITION; HIGH ELECTRON MOBILITY TRANSISTORS;
D O I：
10.1049/el:19931038
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
MOCVD-grown InGaAs/InAlAs HEMTs with excellent noise performance comparable to that of MBE-grown devices have been successfully fabricated. A minimum noise figure lower than 0.30 dB has been obtained with an associated gain of approximately 15 dB at 12GHz. Furthermore, devices in ceramic packages have exhibited a minimum noise figure of 0.42 dB.
引用
收藏
页码：1557 / 1558
页数：2
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