EXTREMELY LOW-NOISE INGAAS/INAIAS HEMT GROWN BY MOCVD

被引：2

作者：

FUJITA, S ^{[1
]}

NODA, T ^{[1
]}

WAGAI, A ^{[1
]}

HOSOI, S ^{[1
]}

ASHIZAWA, Y ^{[1
]}

机构：

[1] TOSHIBA CO LTD,CTR MICROELECTR,SAIWAI KU,KAWASAKI 210,JAPAN

来源：

ELECTRONICS LETTERS | 1993年 / 29卷 / 17期

关键词：

CHEMICAL VAPOR DEPOSITION; HIGH ELECTRON MOBILITY TRANSISTORS;

D O I：

10.1049/el:19931038

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

MOCVD-grown InGaAs/InAlAs HEMTs with excellent noise performance comparable to that of MBE-grown devices have been successfully fabricated. A minimum noise figure lower than 0.30 dB has been obtained with an associated gain of approximately 15 dB at 12GHz. Furthermore, devices in ceramic packages have exhibited a minimum noise figure of 0.42 dB.

引用

页码：1557 / 1558

页数：2

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