HIGH ASPECT RATIO 0.1 MU-M TUNGSTEN GATES FOR INGAAS/INAIAS HETEROJUNCTION TRANSISTORS

被引：12
|
作者：
TENNANT, DM
SHUNK, SC
FEUER, MD
KUO, JM
BEHRINGER, RE
CHANG, TY
EPWORTH, RW
机构：
来源：
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1989年 / 7卷 / 06期
关键词：
D O I：
10.1116/1.584676
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
引用
收藏
页码：1836 / 1840
页数：5
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