首页
学术期刊
论文检测
AIGC检测
热点
更多
数据
HIGH-PERFORMANCE INGAASP INP BURIED-HETEROSTRUCTURE LASERS AND ARRAYS DEFINED BY ION-BEAM-ASSISTED ETCHING
被引:6
|
作者
:
YAP, D
论文数:
0
引用数:
0
h-index:
0
YAP, D
LIAU, ZL
论文数:
0
引用数:
0
h-index:
0
LIAU, ZL
TSANG, DZ
论文数:
0
引用数:
0
h-index:
0
TSANG, DZ
WALPOLE, JN
论文数:
0
引用数:
0
h-index:
0
WALPOLE, JN
机构
:
来源
:
APPLIED PHYSICS LETTERS
|
1988年
/ 52卷
/ 18期
关键词
:
D O I
:
10.1063/1.99099
中图分类号
:
O59 [应用物理学];
学科分类号
:
摘要
:
引用
收藏
页码:1464 / 1466
页数:3
相关论文
共 50 条
[31]
1.57 MU-M INGAASP/INP SURFACE EMITTING LASERS BY ANGLED FOCUS ION-BEAM ETCHING
LEE, HP
论文数:
0
引用数:
0
h-index:
0
机构:
Bell Communications Research, Red Bank
LEE, HP
SCHERER, A
论文数:
0
引用数:
0
h-index:
0
机构:
Bell Communications Research, Red Bank
SCHERER, A
BEEBE, ED
论文数:
0
引用数:
0
h-index:
0
机构:
Bell Communications Research, Red Bank
BEEBE, ED
HONG, WP
论文数:
0
引用数:
0
h-index:
0
机构:
Bell Communications Research, Red Bank
HONG, WP
BHAT, R
论文数:
0
引用数:
0
h-index:
0
机构:
Bell Communications Research, Red Bank
BHAT, R
KOZA, MA
论文数:
0
引用数:
0
h-index:
0
机构:
Bell Communications Research, Red Bank
KOZA, MA
ELECTRONICS LETTERS,
1992,
28
(06)
: 580
-
582
[32]
InGaAsP/InP 1.55-mu m lasers with chemically assisted ion beam-etched facets
Daleiden, J
论文数:
0
引用数:
0
h-index:
0
机构:
TELEKOM FORSCH & TECHNOL ZENTRUM,D-64295 DARMSTADT,GERMANY
Daleiden, J
Eisele, K
论文数:
0
引用数:
0
h-index:
0
机构:
TELEKOM FORSCH & TECHNOL ZENTRUM,D-64295 DARMSTADT,GERMANY
Eisele, K
Keller, R
论文数:
0
引用数:
0
h-index:
0
机构:
TELEKOM FORSCH & TECHNOL ZENTRUM,D-64295 DARMSTADT,GERMANY
Keller, R
Vollrath, G
论文数:
0
引用数:
0
h-index:
0
机构:
TELEKOM FORSCH & TECHNOL ZENTRUM,D-64295 DARMSTADT,GERMANY
Vollrath, G
Fiedler, F
论文数:
0
引用数:
0
h-index:
0
机构:
TELEKOM FORSCH & TECHNOL ZENTRUM,D-64295 DARMSTADT,GERMANY
Fiedler, F
Ralston, JD
论文数:
0
引用数:
0
h-index:
0
机构:
TELEKOM FORSCH & TECHNOL ZENTRUM,D-64295 DARMSTADT,GERMANY
Ralston, JD
OPTICAL AND QUANTUM ELECTRONICS,
1996,
28
(05)
: 527
-
532
[33]
HIGH-PERFORMANCE INGAASP/INP SEMICONDUCTOR QUANTUM-WELL LASERS REALIZED BY GAS SOURCE MOLECULAR-BEAM EPITAXY
ACCARD, A
论文数:
0
引用数:
0
h-index:
0
ACCARD, A
BRILLOUET, F
论文数:
0
引用数:
0
h-index:
0
BRILLOUET, F
DUDA, E
论文数:
0
引用数:
0
h-index:
0
DUDA, E
FERNIER, B
论文数:
0
引用数:
0
h-index:
0
FERNIER, B
GELLY, G
论文数:
0
引用数:
0
h-index:
0
GELLY, G
GOLDSTEIN, L
论文数:
0
引用数:
0
h-index:
0
GOLDSTEIN, L
LECLERC, D
论文数:
0
引用数:
0
h-index:
0
LECLERC, D
LESTERLIN, D
论文数:
0
引用数:
0
h-index:
0
LESTERLIN, D
JOURNAL DE PHYSIQUE III,
1992,
2
(09):
: 1727
-
1738
[34]
SUPPRESSION OF SIDE-ETCHING IN C2H6/H-2/O-2 REACTIVE ION ETCHING FOR THE FABRICATION OF AN INGAASP/INP P-SUBSTRATE BURIED-HETEROSTRUCTURE LASER-DIODE
SUGIMOTO, H
论文数:
0
引用数:
0
h-index:
0
机构:
MITSUBISHI ELECTR CORP,OPTOELECTR & MICROWAVE DEVICE LAB,ITAMI,HYOGO 664,JAPAN
MITSUBISHI ELECTR CORP,OPTOELECTR & MICROWAVE DEVICE LAB,ITAMI,HYOGO 664,JAPAN
SUGIMOTO, H
ISU, T
论文数:
0
引用数:
0
h-index:
0
机构:
MITSUBISHI ELECTR CORP,OPTOELECTR & MICROWAVE DEVICE LAB,ITAMI,HYOGO 664,JAPAN
MITSUBISHI ELECTR CORP,OPTOELECTR & MICROWAVE DEVICE LAB,ITAMI,HYOGO 664,JAPAN
ISU, T
TADA, H
论文数:
0
引用数:
0
h-index:
0
机构:
MITSUBISHI ELECTR CORP,OPTOELECTR & MICROWAVE DEVICE LAB,ITAMI,HYOGO 664,JAPAN
MITSUBISHI ELECTR CORP,OPTOELECTR & MICROWAVE DEVICE LAB,ITAMI,HYOGO 664,JAPAN
TADA, H
MIURA, T
论文数:
0
引用数:
0
h-index:
0
机构:
MITSUBISHI ELECTR CORP,OPTOELECTR & MICROWAVE DEVICE LAB,ITAMI,HYOGO 664,JAPAN
MITSUBISHI ELECTR CORP,OPTOELECTR & MICROWAVE DEVICE LAB,ITAMI,HYOGO 664,JAPAN
MIURA, T
SHIBA, T
论文数:
0
引用数:
0
h-index:
0
机构:
MITSUBISHI ELECTR CORP,OPTOELECTR & MICROWAVE DEVICE LAB,ITAMI,HYOGO 664,JAPAN
MITSUBISHI ELECTR CORP,OPTOELECTR & MICROWAVE DEVICE LAB,ITAMI,HYOGO 664,JAPAN
SHIBA, T
KIMURA, T
论文数:
0
引用数:
0
h-index:
0
机构:
MITSUBISHI ELECTR CORP,OPTOELECTR & MICROWAVE DEVICE LAB,ITAMI,HYOGO 664,JAPAN
MITSUBISHI ELECTR CORP,OPTOELECTR & MICROWAVE DEVICE LAB,ITAMI,HYOGO 664,JAPAN
KIMURA, T
TAKEMOTO, A
论文数:
0
引用数:
0
h-index:
0
机构:
MITSUBISHI ELECTR CORP,OPTOELECTR & MICROWAVE DEVICE LAB,ITAMI,HYOGO 664,JAPAN
MITSUBISHI ELECTR CORP,OPTOELECTR & MICROWAVE DEVICE LAB,ITAMI,HYOGO 664,JAPAN
TAKEMOTO, A
JOURNAL OF THE ELECTROCHEMICAL SOCIETY,
1993,
140
(12)
: 3615
-
3620
[35]
1.5 MU-M GAINASP-INP BURIED-HETEROSTRUCTURE LASER DIODE FABRICATED BY REACTIVE ION ETCHING USING A MIXTURE OF ETHANE AND HYDROGEN
MATSUI, T
论文数:
0
引用数:
0
h-index:
0
机构:
MITSUBISHI ELECTR CO,CENT RES LAB,AMAGASAKI,HYOGO 661,JAPAN
MITSUBISHI ELECTR CO,CENT RES LAB,AMAGASAKI,HYOGO 661,JAPAN
MATSUI, T
OHTSUKA, K
论文数:
0
引用数:
0
h-index:
0
机构:
MITSUBISHI ELECTR CO,CENT RES LAB,AMAGASAKI,HYOGO 661,JAPAN
MITSUBISHI ELECTR CO,CENT RES LAB,AMAGASAKI,HYOGO 661,JAPAN
OHTSUKA, K
SUGIMOTO, H
论文数:
0
引用数:
0
h-index:
0
机构:
MITSUBISHI ELECTR CO,CENT RES LAB,AMAGASAKI,HYOGO 661,JAPAN
MITSUBISHI ELECTR CO,CENT RES LAB,AMAGASAKI,HYOGO 661,JAPAN
SUGIMOTO, H
ABE, Y
论文数:
0
引用数:
0
h-index:
0
机构:
MITSUBISHI ELECTR CO,CENT RES LAB,AMAGASAKI,HYOGO 661,JAPAN
MITSUBISHI ELECTR CO,CENT RES LAB,AMAGASAKI,HYOGO 661,JAPAN
ABE, Y
OHISHI, T
论文数:
0
引用数:
0
h-index:
0
机构:
MITSUBISHI ELECTR CO,CENT RES LAB,AMAGASAKI,HYOGO 661,JAPAN
MITSUBISHI ELECTR CO,CENT RES LAB,AMAGASAKI,HYOGO 661,JAPAN
OHISHI, T
APPLIED PHYSICS LETTERS,
1990,
56
(17)
: 1641
-
1642
[36]
ION-BEAM ETCHING OF INP AND ITS APPLICATION TO THE FABRICATION OF HIGH RADIANCE INGAASP/INP LIGHT-EMITTING-DIODES
WADA, O
论文数:
0
引用数:
0
h-index:
0
WADA, O
JOURNAL OF THE ELECTROCHEMICAL SOCIETY,
1984,
131
(10)
: 2373
-
2380
[37]
Uniform and high coupling efficiency between InGaAsP-InP buried heterostructure optical amplifier and monolithically butt-coupled waveguide using reactive ion etching
Ahn, JH
论文数:
0
引用数:
0
h-index:
0
机构:
Optoelectronics Section, Electronics and Telecommunications, Research Institute, Taejon 305-600, Yusong
Ahn, JH
Oh, KR
论文数:
0
引用数:
0
h-index:
0
机构:
Optoelectronics Section, Electronics and Telecommunications, Research Institute, Taejon 305-600, Yusong
Oh, KR
Kim, JS
论文数:
0
引用数:
0
h-index:
0
机构:
Optoelectronics Section, Electronics and Telecommunications, Research Institute, Taejon 305-600, Yusong
Kim, JS
Lee, SW
论文数:
0
引用数:
0
h-index:
0
机构:
Optoelectronics Section, Electronics and Telecommunications, Research Institute, Taejon 305-600, Yusong
Lee, SW
Kim, HM
论文数:
0
引用数:
0
h-index:
0
机构:
Optoelectronics Section, Electronics and Telecommunications, Research Institute, Taejon 305-600, Yusong
Kim, HM
Pyun, KE
论文数:
0
引用数:
0
h-index:
0
机构:
Optoelectronics Section, Electronics and Telecommunications, Research Institute, Taejon 305-600, Yusong
Pyun, KE
Park, HM
论文数:
0
引用数:
0
h-index:
0
机构:
Optoelectronics Section, Electronics and Telecommunications, Research Institute, Taejon 305-600, Yusong
Park, HM
IEEE PHOTONICS TECHNOLOGY LETTERS,
1996,
8
(02)
: 200
-
202
[38]
HIGH-EFFICIENCY INGAASP/INP FLAT-SURFACE BURIED HETEROSTRUCTURE DISTRIBUTED FEEDBACK LASERS AT 1.55 MU-M
WAKAO, K
论文数:
0
引用数:
0
h-index:
0
WAKAO, K
KIHARA, K
论文数:
0
引用数:
0
h-index:
0
KIHARA, K
KOTAKI, Y
论文数:
0
引用数:
0
h-index:
0
KOTAKI, Y
KUSUNOKI, T
论文数:
0
引用数:
0
h-index:
0
KUSUNOKI, T
SUDO, H
论文数:
0
引用数:
0
h-index:
0
SUDO, H
ISOZUMI, S
论文数:
0
引用数:
0
h-index:
0
ISOZUMI, S
YAMAKOSHI, S
论文数:
0
引用数:
0
h-index:
0
YAMAKOSHI, S
ISHIKAWA, H
论文数:
0
引用数:
0
h-index:
0
ISHIKAWA, H
IMAI, H
论文数:
0
引用数:
0
h-index:
0
IMAI, H
JOURNAL OF APPLIED PHYSICS,
1987,
62
(05)
: 2153
-
2154
[39]
INFLUENCE OF (111) REGROWTH SIDEWALL INTERFACES ON THE PERFORMANCE OF 1.54 MU-M INGAASP/INP ETCHED-MESA-BURIED-HETEROSTRUCTURE LASERS
CHU, SNG
论文数:
0
引用数:
0
h-index:
0
CHU, SNG
LOGAN, RA
论文数:
0
引用数:
0
h-index:
0
LOGAN, RA
TEMKIN, H
论文数:
0
引用数:
0
h-index:
0
TEMKIN, H
JOURNAL OF APPLIED PHYSICS,
1987,
61
(07)
: 2434
-
2437
[40]
Differential gain and threshold current of 1.3 μm tensile-strained InGaAsP multi quantum well buried-heterostructure lasers grown by metalorganic molecular beam epitaxial growth
Itoh, M
论文数:
0
引用数:
0
h-index:
0
机构:
NTT Corp, Optoelect Labs, Atsugi, Kanagawa 24301, Japan
NTT Corp, Optoelect Labs, Atsugi, Kanagawa 24301, Japan
Itoh, M
Sugiura, H
论文数:
0
引用数:
0
h-index:
0
机构:
NTT Corp, Optoelect Labs, Atsugi, Kanagawa 24301, Japan
NTT Corp, Optoelect Labs, Atsugi, Kanagawa 24301, Japan
Sugiura, H
Yasaka, H
论文数:
0
引用数:
0
h-index:
0
机构:
NTT Corp, Optoelect Labs, Atsugi, Kanagawa 24301, Japan
NTT Corp, Optoelect Labs, Atsugi, Kanagawa 24301, Japan
Yasaka, H
Kondo, Y
论文数:
0
引用数:
0
h-index:
0
机构:
NTT Corp, Optoelect Labs, Atsugi, Kanagawa 24301, Japan
NTT Corp, Optoelect Labs, Atsugi, Kanagawa 24301, Japan
Kondo, Y
Kishi, K
论文数:
0
引用数:
0
h-index:
0
机构:
NTT Corp, Optoelect Labs, Atsugi, Kanagawa 24301, Japan
NTT Corp, Optoelect Labs, Atsugi, Kanagawa 24301, Japan
Kishi, K
Fukuda, M
论文数:
0
引用数:
0
h-index:
0
机构:
NTT Corp, Optoelect Labs, Atsugi, Kanagawa 24301, Japan
NTT Corp, Optoelect Labs, Atsugi, Kanagawa 24301, Japan
Fukuda, M
Itaya, Y
论文数:
0
引用数:
0
h-index:
0
机构:
NTT Corp, Optoelect Labs, Atsugi, Kanagawa 24301, Japan
NTT Corp, Optoelect Labs, Atsugi, Kanagawa 24301, Japan
Itaya, Y
APPLIED PHYSICS LETTERS,
1998,
72
(13)
: 1553
-
1555
←
1
2
3
4
5
→