共 50 条
- [1] PREDICTION OF INFLUENCE OF ADDITIVES ON DENSITY OF VALENCE-ALTERNATION CENTERS IN LONE-PAIR SEMICONDUCTORSPHILOSOPHICAL MAGAZINE, 1978, 37 (01): : 127 - 133KASTNER, M
- [3] VALENCE-ALTERNATION MODEL FOR LOCALIZED GAP STATES IN LONE-PAIR SEMICONDUCTORSPHYSICAL REVIEW LETTERS, 1976, 37 (22) : 1504 - 1507KASTNER, MADLER, DFRITZSCHE, H
- [4] EFFECT OF CHARGED ADDITIVES ON CARRIER CONCENTRATIONS IN LONE-PAIR SEMICONDUCTORSPHILOSOPHICAL MAGAZINE B-PHYSICS OF CONDENSED MATTER STATISTICAL MECHANICS ELECTRONIC OPTICAL AND MAGNETIC PROPERTIES, 1978, 37 (03): : 285 - 292FRITZSCHE, HKASTNER, M
- [5] DEFECT CHEMISTRY OF LONE-PAIR SEMICONDUCTORSBULLETIN OF THE AMERICAN PHYSICAL SOCIETY, 1978, 23 (03): : 472 - 472KASTNER, M
- [6] DEFECT CHEMISTRY OF LONE-PAIR SEMICONDUCTORSPHILOSOPHICAL MAGAZINE B-PHYSICS OF CONDENSED MATTER STATISTICAL MECHANICS ELECTRONIC OPTICAL AND MAGNETIC PROPERTIES, 1978, 37 (02): : 199 - 215KASTNER, MFRITZSCHE, H
- [7] Influence of lone-pair electrons of cations on bond-valence parametersZEITSCHRIFT FUR KRISTALLOGRAPHIE, 1996, 211 (07): : 437 - 439Wang, XLiebau, F
- [8] DEFECT CHEMISTRY AND STATES IN THE GAP OF LONE-PAIR SEMICONDUCTORSJOURNAL OF NON-CRYSTALLINE SOLIDS, 1978, 31 (1-2) : 223 - 240KASTNER, M
- [9] COMPOSITIONAL TRENDS IN OPTICAL PROPERTIES OF AMORPHOUS LONE-PAIR SEMICONDUCTORSPHYSICAL REVIEW B, 1973, 7 (12): : 5237 - 5252KASTNER, M