DEFECTS IN LONE-PAIR SEMICONDUCTORS - VALENCE-ALTERNATION MODEL AND NEW DIRECTIONS

被引：58

作者：

KASTNER, M ^{[1
]}

机构：

[1] MIT,ELECTR RES LAB,CAMBRIDGE,MA 02139

来源：

JOURNAL OF NON-CRYSTALLINE SOLIDS | 1980年 / 35-6卷 / JAN-期

关键词：

D O I：

10.1016/0022-3093(80)90300-2

中图分类号：

TQ174 [陶瓷工业]; TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

引用

页码：807 / 817

页数：11

共 50 条

[1] VALENCE-ALTERNATION MODEL FOR LOCALIZED GAP STATES IN LONE-PAIR SEMICONDUCTORS
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[9] EFFECT OF CHARGED ADDITIVES ON CARRIER CONCENTRATIONS IN LONE-PAIR SEMICONDUCTORS
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